Electron Beam Lithography (EBL) is a technique used to create extremely fine patterns on surfaces, often for semiconductor manufacturing. It utilizes a focused beam of electrons to expose a special material called a resist, which changes its properties when hit by the electrons. This allows for the precise fabrication of micro and nanoscale structures. After exposure, the resist is developed, revealing the desired pattern. EBL is known for its high resolution and flexibility, making it suitable for research and development in fields like nanotechnology and microelectronics. However, it is generally slower and more expensive than other lithography methods, such as photolithography.