Molecular Beam Epitaxy (MBE) is a precise technique used to grow thin films of materials, typically semiconductors, one layer at a time. In this process, beams of atoms or molecules are directed onto a substrate in a vacuum environment, allowing for controlled deposition. This method enables the creation of high-quality crystalline structures with specific properties. MBE is widely used in the fabrication of devices such as lasers and transistors, particularly in the field of solid-state physics. The ability to control layer thickness at the atomic level makes MBE essential for developing advanced materials in nanotechnology and quantum computing.