Molecular Beam Epitaxy (MBE) is a precise method used to grow thin films of materials, typically semiconductors, one layer at a time. In this process, beams of atoms or molecules are directed onto a substrate in a vacuum environment, allowing for controlled deposition. This technique enables the creation of high-quality crystalline structures with specific properties. The layers deposited during MBE can be just a few atoms thick, allowing for the fabrication of complex structures like quantum wells and superlattices. MBE is widely used in the production of devices such as laser diodes and transistors, making it essential for advancements in electronics and optoelectronics.