Magnetic Random Access Memory (MRAM) is a type of non-volatile memory that uses magnetic states to store data. Unlike traditional memory types, such as Dynamic Random Access Memory (DRAM) or Flash memory, MRAM retains information even when the power is turned off. This makes it a promising option for applications requiring fast access and durability. MRAM operates by manipulating the magnetic orientation of tiny structures called magnetic tunnel junctions. These junctions can represent binary data as either a 0 or a 1, depending on their magnetic alignment. As a result, MRAM combines the speed of SRAM with the non-volatility of Flash, making it an attractive choice for future computing technologies.