Gallium Arsenide (GaAs) is a compound semiconductor made from gallium and arsenic. It is widely used in high-frequency and optoelectronic applications due to its superior electron mobility and direct bandgap properties. This makes it an ideal material for devices such as lasers, solar cells, and microwave frequency integrated circuits. One of the key advantages of GaAs over traditional silicon is its ability to operate at higher frequencies and temperatures. This has led to its extensive use in mobile phones, satellite communications, and other advanced electronic systems, where performance and efficiency are critical.