Magnetoresistive random-access memory (MRAM) is a type of non-volatile memory that uses magnetic states to store data. Unlike traditional memory, which relies on electric charges, MRAM retains information even when the power is turned off. This makes it a promising option for applications requiring fast and reliable data storage. MRAM operates by changing the resistance of magnetic materials in response to magnetic fields. This technology allows for faster read and write speeds compared to conventional memory types, such as flash memory or dynamic random-access memory (DRAM). As a result, MRAM is being explored for use in various electronic devices and systems.