Quantum Magnetoresistance is a phenomenon observed in certain materials where their electrical resistance changes significantly in the presence of a magnetic field. This effect is particularly pronounced in materials like graphene and topological insulators, where the quantum properties of electrons play a crucial role. When a magnetic field is applied, the motion of electrons is influenced, leading to a change in resistance that can be much larger than in conventional materials. This property has potential applications in spintronics and advanced electronic devices, making it a topic of interest in modern physics and materials science.