Anisotropic Magnetoresistance (AMR) is a phenomenon observed in certain materials where their electrical resistance changes depending on the direction of an applied magnetic field. This effect is particularly significant in ferromagnetic materials, where the resistance can vary based on the alignment of the magnetic moments within the material. AMR is utilized in various applications, including magnetic sensors and data storage devices. By measuring the resistance changes, these devices can detect magnetic fields or store information more efficiently. This property is essential for advancements in spintronics, a field that explores the spin of electrons in addition to their charge.